"Fundamentals of Solid State Engineering" is structured in two major parts. It first addresses the basic physics concepts, which are at the base of solid state matter in general and semiconductors in particular. The second part reviews the technology for modern Solid State Engineering. This includes a review of compound semiconductor bulk and epitaxial thin films growth techniques, followed by a description of current semiconductor device processing and nano-fabrication technologies. A few examples of semiconductor devices and a description of their theory of operational are then discussed, including transistors, semiconductor lasers, and photodetectors.
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Addresses the basic physics concepts, which are at the base of solid state matter in general and semiconductors in particular. This title includes a review of compound semiconductor bulk and epitaxial thin films growth techniques, followed by a description of semiconductor device processing and nano-fabrication technologies.
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Preface. List of Symbols. 1: Crystalline Properties of Solids. 1.1. Introduction. 1.2. Crystal lattices and the seven crystal systems. 1.3. The unit cell concept. 1.4. Bravais lattices. 1.5. Point groups. 1.6. Space groups. 1.7. Directions and planes in crystals: Miller indices. 1.8. Real crystal structures. 1.9. Summary. Further reading. Problems. 2: Electronic Structure of Atoms. 2.1. Introduction. 2.2. Spectroscopic emission lines and atomic structure of hydrogen. 2.3. Atomic orbitals. 2.4. Structures of atoms with many electrons. 2.5. Bonds in solids. 2.6. Introduction to energy bands. 2.7. Summary. Further reading. Problems. 3: Introduction to Quantum Mechanics. 3.1. The quantum concepts. 3.2. Elements of quantum mechanics. 3.3. Simple quantum mechanical systems. 3.4. Reciprocal lattice. 3.5. Summary. Further reading. Problems. 4: Electrons and Energy Band Structures in Crystals. 4.1. Introduction. 4.2. Electrons in a crystal. 4.3. Band structures in real semiconductors. 4.4. Band structures in metals. 4.5. Summary. References. Further reading. Problems. 5: Low Dimensional Quantum Structures. 5.1. Introduction. 5.2. Density of states (3D). 5.3. Two-dimensional structures: quantum wells. 5.4. One-dimensional structures: quantum wires. 5.5. Zero-dimensional structures: quantum dots. 5.6. Optical properties of 3D and 2D structures. 5.7. Examples of low dimensional structures. 5.8. Summary. References. Further reading. Problems. 6: Phonons. 6.1. Introduction. 6.2. Interaction of atoms in crystals: origin and formalism. 6.3. One-dimensional monoatomic harmonic crystal. 6.4. Sound velocity. 6.5. One-dimensional diatomic harmonic crystal. 6.6. Phonons. 6.7. Summary. Further reading. Problems. 7: Thermal Properties of Crystals. 7.1. Introduction. 7.2. Phonon density of states (Debye model). 7.3. Heat capacity. 7.4. Thermal expansion. 7.5. Thermal conductivity. 7.6. Summary. References. Further reading. Problems. 8: Equilibrium Charge Carrier Statistics in Semiconductors. 8.1. Introduction. 8.2. Density of states. 8.3. Effective density of states (conduction band). 8.4. Effective density of states (valence band). 8.5. Mass action law. 8.6. Doping: intrinsic vs. extrinsic semiconductor. 8.7. Charge neutrality. 8.8. Fermi energy as a function of temperature. 8.9. Carrier concentration in a semiconductor. 8.10. Summary. Further reading. Problems. 9: Non-Equilibrium Electrical Properties of Semiconductors. 9.1. Introduction. 9.2. Electrical conductivity. 9.3. Hall effect. 9.4. Charge carrier diffusion. 9.5. Quasi-Fermi energy. 9.6. Carrier generation and recombination mechanisms. 9.7. Summary. Further reading. Problems. 10: Semiconductor Junctions. 10.1. Introduction. 10.2. Ideal p-n junction at equilibrium. 10.3. Non-equilibrium properties of p-n junctions. 10.4. Deviations from the ideal p-n diode case. 10.5. Metal-semiconductor junctions. 10.6. Summary. Further reading. Problems. 11: Compound Semiconductors and Crystal Growth Techniques. 11.1. Introduction. 11.2. III-V semiconductor alloys. 11.3. Bulk single crystal growth techniques. 11.4. Epitaxial growth techniques. 11.5. Summary. References. Further reading. Problems. 12: Semiconductor Device Technology. 12.1. Introduction. 12.2. Oxidation. 12.3. Diffusion of dopants. 12.4. Ion implantation of dopants. 12.5. Characterization of diffused and implanted layers. 12.6. Summary. References. Further reading. Problems. 13: Semiconductor Device Processing. 13.1. Introduction. 13.2. Photolithography. 13.3. Electron-beam lithography. 13.4. Etching. 13.5. Metallization. 13.6. Packaging of devices. 13.7. Summary. References. Further reading. Problems. 14: Transistors. 14.1. Introduction. 14.2. Overview of amplification and switching. 14.3. Bipolar junction transistors. 14.4. Heterojunction bipolar transistors. 14.5. Field effect transistors. 14.6. Summary. References. Problems. 15: Semiconductor Lasers. 15.1. Introduction. 15.2. Types of lasers. 15.3. General laser theory. 15.4. Ruby laser. 15.5. Semiconductor lasers. 15.6. Summary. References. Further reading. Problems. 16: Photodetectors. 16.1. Introduction. 16.2. Electromagnetic radiation. 16.3. Photodetector parameters. 16.4. Thermal detectors. 16.5. Photon detectors. 16.6. Examples of photon detectors. 16.7. Summary. References. Further reading. Problems. Appendix. References. Index.
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Produktdetaljer

ISBN
9780792376293
Publisert
20020200
Utgiver
Vendor
Kluwer Academic Publishers
Vekt
2420 gr
Høyde
156 mm
Bredde
234 mm
Dybde
38 mm
Aldersnivå
05, 06, UP, P
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
656

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Biographical note

Manijeh Razeghi is a Walter P. Murphy Professor of Electrical and Computer Engineering and Director of the Center for Quantum Devices at Northwestern University. She joined the ECE department in 1991. Prior to that, she was the Head of the Exploratory Materials Lab, Thomson-CSF, Orsay, France, from 1986-1991. She has authored 1000 papers, given more than 500 invited and plenary talks, written 12 book chapters, 8 books, and holds 50 patents. Dr. Razeghi is a Fellow of the International Engineering Consortium, a Life Member and Fellow of the Society of Women Engineers, and a Fellow of the Society of Photo-Optical Instrumentation Engineering, the Optical Society of America (OSA), and of the IEEE. She won the IBM Europe Science and Technology Prize, an Achievement Award from the Society of Women Engineers, and many Best Paper Awards. Manijeh Razeghi received her DEA in 1976, the Docteur 3eme Cycle in Solid State Physics in 1977, and the Docteur d'Etat des Sciences Physiques in 1980, all from the Universite de Paris Sud (11), France.