Amorphous silicon PV panel mass production will require to mas- ter plasma chemical deposition in terms of large sizes, cost, maintenance and all other problems related to industrialization. Since plasma deposition is a novel technique, the development of all this production related know how involves a considerable technical research effort. The major problems related to the design of a production deposi- tion machine are the following - deposition should be uniform on very large area substrate (typical dimension 1 meter); - the deposited amorphous silicon should have good electronic properties (density of state of the order or less than 16 3 10 cm /eV) and very low impurities concentrations (for exam- ple oxygen atomic concentration should idealy be less than 0. 01 %); - the film stress should be limited, the density of ponctual defects (particulates) should remain reasonable (less than 2 per 100 cm ); - dopant level control should be stable and efficient; - silane consumption should remain reasonably efficient - financial cost being important the machine productivity should be high hence deposition rate optimized; - downtime due to maintenance should be reduced to a minimum. We present here some results on the R&D effort addressed to the above mentioned problems. An original single chamber was designed. This machine will be made available on the market for R&D purposes by a process machine company. Finally the maintenance problem is considered. Plasma cleaning based on a fluorine containing etchant gases is studied and evaluated. 2.
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Proceedings of the Second Contractors' Meeting held in Hamburg, September 16-18, 1987
Amorphous Silicon Solar Cells (AMOR).- 1. A-Si Solar cells prepared by the glow discharge technique.- * Development of the scientific and technical basis for integrated amorphous silicon modules.- -Deposition techniques for a-Si.- -Physics of the pin device.- -Improvement of the device structure.- -Description of the research work carried out at SCK/CEN.- -AES analysis of the SnO2/a-Si:H inferface.- -The French contribution to the project.- -Light trapping in a-Si:H solar cells by texturization of the glass substrate.- -Photochemical process induced by a low pressure Hg lamp and a pulsed ArF excimer laser for depositing hydrogenated silicon films.- -Vacuum UV photo CVD for amorphous silicon carbon alloys.- -Preparation of improved amorphous silicon cells with p-i-n structure based on new volatile hydrides and fluorides of silicon and germanium.- -Development of the scientific and technical basis for integrated amorphous silicon modules.- * Low-gap alloys for amorphous silicon based solar cells -Narrow band-gap alloys for the improvement of efficiency of amorphous silicon-based solar cells.- -The Italian contribution to the project.- -Characterization of amorphous silicon alloys through thermal H effusion.- -Characterization of hydrogenated amorphous silicon by photo deflection spectroscopy.- * Kinetic study of the deposition process of glow discharge a-Si:H for high efficiency solar cells.- -The Greek contribution to the project.- -Characterization of SiH4:H2 plasmas for a-Si:H film deposition.- * Electro-Optical properties of a-Si;H/?C-Si;H and a-Si:C:H/?C-Si:C:H undoped and doped films produced by a TCDDC system.- * Eyaluation of promising alternative a-Si deposition method.- * Development of a high deposition rate technique for device quality thin films of hydrogenated amorphous silicon.- * Preparation of solar grade amorphous silicon for PV cells by means of an electrolytic process.- * Hydrogenated amorphous silicon by disilane LPCVD.- Thin Film Solar Cells From Alternative Materials (ALTERNA).- 1. High efficiency crystalline silicon thin-film solar cells.- * High efficiency thin-film solar cells on upgraded metallurgical grade silicon substrates.- * The French contribution to the project.- * Modelling of epitaxial cells on UMG silicon and feasibility of a high throughput epitaxial reactor.- * Growth and characterization of poly-Si ingots.- * Growth and characterization of poly-Si ingots.- 2. Thin film solar cells based on II-VI and ternary chalcopyrite semiconductor materials.- * Thin film solar cells based on the chalcopyrite semiconductor U(GA,IN)SE.- * Research and development on sprayed CdS-CuInSe2 thin filmsolar cells.- * CuInSe2/CdS thin film solar cells by R.F. sputtering.- * Electrochemical study of chalcopyrite semiconductor s.- * Thin film of copper indium diselenide for PV devices.- * Development of CdSe thin film solar cells with regard to the requirements for the use in tandem structures.- * The fabrication of merocyanine dyes for use as PV materials.- 3. III-V compound semiconductors for use in thin film cells or in monolytic multilayer cells.- * Optimization of high efficiency multilayer solar cells based on III-V compounds.- -MOCVD and characterization.- -KBE and physical analysis.- -Inhomogeneities in LEC GaAs substrates for solar cell applications.- * High efficiency multispectral cells based on III-V compound semiconductors.- GaAs thin film solar cells obtained by vapour phase homoepitaxy (VPE) on reusable substrates.- -The contribution by ENEA.- -The contribution by CISE.- * Study on the applicability of the ionized cluster beam deposition technology for GaAs thin film solar cells.- High efficiency III-V solar cells for use with fluorescent concentrators.- -The German contribution to the project.- -The Belgian contribution to the project.- * Hydrogen effect on the electrical properties of amorphous gallium arsenide.- List of authors.
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Produktdetaljer

ISBN
9789027726919
Publisert
1988-04-30
Utgiver
Vendor
Kluwer Academic Publishers
Vekt
730 gr
Aldersnivå
05, 06, UP, P
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
320