/

Defects of Solid Semiconductor Structures

Riccio, Michele Irace, Andrea Breglio, Giovanni
Heftet / 2024 / Engelsk

Produktdetaljer

ISBN
9783036406350
Publisert
2024-08-28
Utgiver
Trans Tech Publications Ltd
Vekt
470 gr
Høyde
240 mm
Bredde
170 mm
Dybde
10 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
196

Redaktør
Riccio, Michele
Irace, Andrea
Breglio, Giovanni

Defects of Solid Semiconductor Structures

Riccio, Michele Irace, Andrea Breglio, Giovanni
Heftet / 2024 / Engelsk
Riccio, Michele Irace, Andrea Breglio, Giovanni
Heftet / 2024 / Engelsk
2.276,-
Laveste pris siste 30 dager: 2.276,-
Levering 7-20 dager
Klikk og hent

This special edition addresses one of the most critical aspects of semiconductor technology: the presence and impact of defects within solid semiconductor materials on the performance and reliability of electronic devices. The presented edition will be useful to researchers and engineers in the semiconductor industry and will serve as an essential resource for those looking to deepen their understanding of the nature of defects in semiconductor structures and their influences on the efficiency and reliability of power electronic devices.

Les mer

Special topic volume with invited peer-reviewed papers only

  • Preface
  • Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
  • Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
  • Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
  • Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion
  • Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
  • Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
  • Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
  • The Role of Defects on SiC Device Performance and Ways to Mitigate them
  • Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
  • SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control
  • Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
  • Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates
  • Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
  • Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations
  • Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy
  • Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
  • Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers
  • Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
  • A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
  • Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
  • Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
  • Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
  • High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production
  • Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
  • Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing®
  • Charge Carrier Capture by Prominent Defect Centers in 4H-SiC
Les mer

Relaterte produkter

This special edition addresses one of the most critical aspects of semiconductor technology: the presence and impact of defects within solid semiconductor materials on the performance and reliability of electronic devices. The presented edition will be useful to researchers and engineers in the semiconductor industry and will serve as an essential resource for those looking to deepen their understanding of the nature of defects in semiconductor structures and their influences on the efficiency and reliability of power electronic devices.

Les mer

Special topic volume with invited peer-reviewed papers only

  • Preface
  • Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
  • Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
  • Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
  • Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion
  • Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
  • Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
  • Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
  • The Role of Defects on SiC Device Performance and Ways to Mitigate them
  • Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
  • SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control
  • Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
  • Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates
  • Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
  • Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations
  • Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy
  • Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
  • Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers
  • Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
  • A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
  • Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
  • Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
  • Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
  • High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production
  • Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
  • Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing®
  • Charge Carrier Capture by Prominent Defect Centers in 4H-SiC
Les mer

Produktdetaljer

ISBN
9783036406350
Publisert
2024-08-28
Utgiver
Trans Tech Publications Ltd
Vekt
470 gr
Høyde
240 mm
Bredde
170 mm
Dybde
10 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
196

Redaktør
Riccio, Michele
Irace, Andrea
Breglio, Giovanni

Relaterte produkter