Formation of Solid-State Structures
Heftet /
2024
/ Engelsk
Produktdetaljer
ISBN
9783036406329
Publisert
2024-08-28
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
540 gr
Høyde
240 mm
Bredde
170 mm
Dybde
12 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
238
The development of solid-state semiconductor structures is at the forefront of technological innovation, driving advancements across various applications of microelectronics and high-power devices. The formation and processing of semiconductor solid-state structures involve a series of sophisticated and precision technologies that improve functionality and provide integration of finished components into complex circuits. This special edition is an essential resource for engineers and researchers involved in developing and applying semiconductor technologies.
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<p>Special topic volume with invited peer-reviewed papers only</p>
- Preface
- Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation
- TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer
- Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems
- Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing
- Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping
- Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide
- Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC
- Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC
- Prediction of Contact Resistance of 4H–SiC by Machine Learning Using Optical Microscope Images after Laser Doping
- The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC
- Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing
- Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC
- Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization
- Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC
- Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing
- Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers
- Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget
- Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization
- Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC
- Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs
- Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs
- Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
- Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
- Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power Devices
- Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface
- Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
- High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2
- Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry
- Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal
- Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask
- A Comparison between Different Post Grinding Processes on 4H-SiC Wafers
- Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC
- High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C)
Les mer
Produktdetaljer
ISBN
9783036406329
Publisert
2024-08-28
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
540 gr
Høyde
240 mm
Bredde
170 mm
Dybde
12 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
238