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Solid-State Power Devices: Circuitry and Characterizations

Riccio, Michele Irace, Andrea Breglio, Giovanni
Heftet / 2024 / Engelsk

Produktdetaljer

ISBN
9783036406336
Publisert
2024-09-09
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
520 gr
Høyde
240 mm
Bredde
170 mm
Dybde
11 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
224

Redaktør
Riccio, Michele
Irace, Andrea
Breglio, Giovanni

Solid-State Power Devices: Circuitry and Characterizations

Riccio, Michele Irace, Andrea Breglio, Giovanni
Heftet / 2024 / Engelsk
Riccio, Michele Irace, Andrea Breglio, Giovanni
Heftet / 2024 / Engelsk
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The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.

Les mer
<p>Special topic volume with invited peer-reviewed papers only</p>
  • Preface
  • 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class
  • Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
  • Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics
  • Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics
  • Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts
  • Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices
  • 1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
  • Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
  • Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
  • A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
  • SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
  • High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
  • Normally-Off 1200V Silicon Carbide JFET Diode with Low VF
  • On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
  • Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
  • Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
  • Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
  • Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
  • Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
  • Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
  • Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
  • Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
  • Comparison of Si CMOS and SiC CMOS Operational Amplifiers
  • Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
  • Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
  • The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
  • Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
  • Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
  • Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
  • Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes
Les mer

Relaterte produkter

The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.

Les mer
<p>Special topic volume with invited peer-reviewed papers only</p>
  • Preface
  • 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class
  • Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
  • Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics
  • Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics
  • Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts
  • Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices
  • 1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
  • Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
  • Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
  • A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
  • SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
  • High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
  • Normally-Off 1200V Silicon Carbide JFET Diode with Low VF
  • On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
  • Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
  • Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
  • Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
  • Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
  • Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
  • Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
  • Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
  • Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
  • Comparison of Si CMOS and SiC CMOS Operational Amplifiers
  • Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
  • Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
  • The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
  • Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
  • Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
  • Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
  • Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes
Les mer

Produktdetaljer

ISBN
9783036406336
Publisert
2024-09-09
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
520 gr
Høyde
240 mm
Bredde
170 mm
Dybde
11 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
224

Redaktør
Riccio, Michele
Irace, Andrea
Breglio, Giovanni

Relaterte produkter