Solid-State Power Devices: Operational Reliability and Parameters' Stability
Heftet /
2024
/ Engelsk
Produktdetaljer
ISBN
9783036406473
Publisert
2024-09-12
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
370 gr
Høyde
240 mm
Bredde
170 mm
Dybde
7 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
134
The appearance of solid-state silicon oxide high-power devices has been a cornerstone in the evolution of modern power electronics, enabling efficient processes of power conversion and power management in a wide array of applications. This special edition aims to provide engineers, researchers, and industry professionals with a deeper understanding of the challenges and solutions associated with maintaining the reliability and stability of solid-state high-power devices.
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<p>Special topic volume with invited peer-reviewed papers only</p>
- Preface
- Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
- Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
- Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
- Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
- Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
- Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
- A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
- Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
- Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors
- Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
- UIS Ruggedness of Parallel 4H-SiC MOSFETs
- The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
- Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
- AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
- Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
- High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
- Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
- Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications
- Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Les mer
Produktdetaljer
ISBN
9783036406473
Publisert
2024-09-12
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
370 gr
Høyde
240 mm
Bredde
170 mm
Dybde
7 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
134