Produktdetaljer
ISBN
9783036409146
Publisert
2025-09-17
Utgiver
Trans Tech Publications Ltd
Vekt
320 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
100
This special edition analyses recent technological advances, modern design methodologies, and performance evaluation and parameters optimisation techniques of SiC-based power devices.
Special topic volume with invited peer-reviewed papers only
- Preface
- Design Parameters Impact on Electrical Characteristics of 4H-SiC Thyristors with Etched Junction Termination Extension
- SiC MOSFETs C-V Capacitance Curves with Negative Biased Drain
- TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs
- On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices
- The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation
- Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
- Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film along the Trench Surface
- SiC Schottky-Barrier Diode without Ion-Implanted P-Type Regions
- Three Level Pulses to Investigate Gate Switching Instability
- DFT Calculations on the Termination of 4H-SiC Non-Polar Surfaces during Photoelectrochemical Pore Formation
- TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
- Lifetime Modeling of MOS Based SiC Vertical Power Devices under High Voltage Blocking Stress
Les mer
Produktdetaljer
ISBN
9783036409146
Publisert
2025-09-17
Utgiver
Trans Tech Publications Ltd
Vekt
320 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
100