Produktdetaljer
ISBN
9783036409139
Publisert
2025-09-12
Utgiver
Trans Tech Publications Ltd
Vekt
320 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
106
As a valuable resource for researchers, engineers, and practitioners, this special edition presents a balanced account of the scientific foundations together with the engineering and technological solutions that underpin the advancement and deployment of SiC-based power devices.
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Special topic volume with invited peer-reviewed papers only
- Preface
- Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor
- Investigation on Effect of Electrical Characteristics of Proton Implanted 4H-SiC MOSFET
- Evaluation of Switching Performances and Short Circuit Capability of a 1.2 kV SiC GAA MOSFET through TCAD Simulations
- Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
- Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET
- Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance
- Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization
- Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
- 1200 V 4H-SiC VDMOSFET Having > 2.5x On-Current Improvement
- Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs
- Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts
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Produktdetaljer
ISBN
9783036409139
Publisert
2025-09-12
Utgiver
Trans Tech Publications Ltd
Vekt
320 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
106