Produktdetaljer
ISBN
9783036409153
Publisert
2025-09-24
Utgiver
Trans Tech Publications Ltd
Vekt
290 gr
Høyde
240 mm
Bredde
170 mm
Dybde
4 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
82
This special edition comprehensively overviews state-of-the-art technologies for designing structures and analysing functional characteristics of SiC-based devices and integrated circuits, which, in modern conditions of scientific and technological progress, have wide applications in many engineering and manufacturing fields.
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Special topic volume with invited peer-reviewed papers only
- Preface
- Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes
- Cost-Effective Design and Optimization of a 3300-V Semi-Superjunction 4H-SiC MOSFET Device
- A Physics-Based SPICE Model for a SiС Vertical Power MOSFET
- A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs
- Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET
- Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
- A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application
- Design and Simulation of Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
- Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
- Fast High Current Sensing SMD Resistor Network Layout for Low Inductance Insertion
Les mer
Produktdetaljer
ISBN
9783036409153
Publisert
2025-09-24
Utgiver
Trans Tech Publications Ltd
Vekt
290 gr
Høyde
240 mm
Bredde
170 mm
Dybde
4 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
82