Produktdetaljer
ISBN
9783036409108
Publisert
2025-09-18
Utgiver
Trans Tech Publications Ltd
Vekt
300 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
92
This special edition is a helpful resource for researchers, engineers, and practitioners involved in developing, designing, and manufacturing next-generation power electronic components. The articles cover both fundamental principles and applied methodologies, offering a balanced perspective on modern semiconductor technology.
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Special topic volume with invited peer-reviewed papers only
- Preface
- Filling-Design Effect of Powder Source in the Crucible on SiC Single-Crystal Growth
- Nitrogen Dopant Incorporation into Epitaxial 4H-SiC and the Influence of CVD Growth Parameters
- Epitaxial SiC Development for High Nitrogen Incorporation
- The 4H-SiC Epitaxy Study of Ammonia Doping
- Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy
- Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks
- Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
- Active Planarization Method from Rough Surface of 4º-off 4H-SiC (0001) Controlled by Step Bunching and Debunching Mechanism Using Dynamic AGE-ing®
- The Application of Dynamical Thermal Annealing Processes after Mechanical Slicing as an Integrated Contactless SiC Wafering Method to Control Crystal Defects
- Optimization of Heat Transfer Design for High Quality 4H-SiC Ingot Growth
- High-Quality SiC Crystal Growth by Cooldown Rate Control at Cooling Stage
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Produktdetaljer
ISBN
9783036409108
Publisert
2025-09-18
Utgiver
Trans Tech Publications Ltd
Vekt
300 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
92