6th Forum on New Materials, part of CIMTEC 2014

Proceedings of the 6th Forum on New Materials, part of CIMTEC 2014-13th International Ceramics Congress and 6th Forum on New Materials, June 15-19, 2014, Montecatini Terme, Italy

• Preface
• Chapter 1: Novel Functional Carbon Nanomaterials
• Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and Substrate
• Research of Diamond-Like Carbon Film Deposited by Double Pulsed Lasers
• Evolution of Cu Surface Morphology and its Effect on Graphene Synthesized by Chemical Vapor Deposition
• Liquid Crystal Assisted Selective Separation of Large Graphene Oxide and its Size Dependent Oxygen Reduction Catalytic Effect
• The Possibilities of Graphenes Application in Textronic Devices
• Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic Circuit
• Development of Carbon-Nanotube Composite Thread and its Application to "Thread Transistor"
• Energy Gap Associated to Photocatalytic Activity of MWCNT/TiO₂/ZnO Nanocomposites
• Carbon Coils-Polyurethane Composites for the Shielding Materials of Electromagnetic Interference
• Chapter 2: Transport in Inorganic Materials
• The Influence of the Exterior Surface on Grain Boundary Mobility Measurements
• Protonic SOFCs Using Perovskite-Type Conductors
• Vacancy Diffusion under a Stress and Kinetic of Nanovoid Growth in Cubic Metals
• Chapter 3: Non-Volatile Inorganic Memory Devices
• Two-Terminal Non-Volatile Memory Devices Using Silicon Nanowires as the Storage Medium
• Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides
• Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation
• Resistive Switching Behavior in Undoped α-Fe₂O₃ Film with a Low Resistivity
• Two Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon Nanostructures
• Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture
• Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application
• Thermal Conductivity Measurement of a Sb₂Te₃ Phase Change Nanowire
• MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability
• Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors
• Integration of STT-MRAMs for Embedded Cache Memories
• Chapter 4: Novel Superconducting Materials
• Superconductivity at T_c = 36.5 K in Na-Substituted SrFe₂As₂ Single Crystals
• Role of Mg-B-O Nanostructural Inhomogenities on the Performance of Superconducting MgB₂
• Microwave Measurements of Surface Resistance and Complex Conductivity of NdBaCuO Films
• Critical Current Density and Pinning Energy of Partial Melted Sm-Based Superconductor
• Critical Current of Bi-2212 Single Crystal by Doping Oxides as a Pinning Center
• High Critical Currents in Single Grain YBa₂Cu₃O_y Bulk Superconductors Produced by Infiltration-Growth
• Development of Density Functional Theory for Plasmon-Assisted Superconductivity
• Fabrication of MgB₂ Bulk Magnets with High Critical Currents
• New Measurements of the Transition to the Normal State Induced by High Current Densities in High-Tc Superconductor Microbridges under Thermal Smallness Conditions