Selected peer-reviewed extended articles based on abstracts presented at the 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022

Aggregated Book

• Preface
• Chapter 1: Growth and Wafer Manufacturing
• Epitaxial Growth of Boron Carbide on 4H-SiC
• Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs
• Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
• Suppression of In-Grown SF Formation and BPD Propagation in 4H-SiC Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth
• Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
• Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
• High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
• In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
• Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
• Study of GHz-Burst Femtosecond Laser Micro-Punching of 4H-SiC Wafers
• 3C-SiC Island Growth on 4H-SiC Terraces: Statistical Evidence for the Orientation Selection Rule
• Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
• Development of High Quality 8 Inch 4H-SiC Substrates
• 4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
• Tailored Polycrystalline Substrate for SmartSiC^TM Substrates Enabling High Performance Power Devices
• Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
• Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements
• Al Implantation in SiC; Where Will the Ions Come to Rest?
• High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas
• Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration
• Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs
• Exploring UV-Laser Effects on Al-Implanted 4H-SiC
• Benchmarking Experiment of Substrate Quality including SmartSiC^TM Wafers by Epitaxy in a Batch Reactor
• Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers
• Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method
• Deep Level Reduction in 4H-SiC Treated by Plasma Immersion
• Improving the Polishing Speed and Surface Quality of 4H-SiC Wafers with an MnO₂- Based Slurry
• Chapter 2: Material Characterization
• Temperature Dependent Electrical Properties of N-Type 4H-SiC Substrates
• Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction
• Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiC
• Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC
• PL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial Wafers
• Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing
• Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
• Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds
• Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators
• Selective Oxidation during AFM Electrical Characterization of Doped SiC Layers
• Evaluation of Crystal Quality and Dopant Activation of Smart Cut^TM - Transferred 4H-SiC Thin Film
• Accurate Determination of the Temperature Dependence of the Refractive Index of 4H-SiC at the Wavelength of 632 nm
• Chapter 3: Defects
• Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices
• Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС
• Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC
• Stacking Faults Originating from Star-Defects in 4H-SiC
• P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory
• Charge State Control over Point Defects in SiC Devices
• Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
• The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
• Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC
• High Sensitivity Surface Defect Inspection of SiC and SmartSiC^TM Substrates Using a DUV Laser-Based System
• Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions
• S-EVC Method for Sorting Wafers with Defects that Extend to Bar Shaped SSFs
• Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
• The Development of the Advanced Inspection System to Screen out the BPDs that Extend to Bar Shaped SSFs under Forward Biasing
• Chapter 4: X-ray Analysis
• Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials
• Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
• Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers
• Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements
• Chapter 5: MOS Interfaces and Processes
• Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs
• Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO₂ Interface Using Sodium Enhanced Oxidation
• Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide
• Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO₂/SiC Lateral MOSFETs
• Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations
• The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
• NO Annealing Simulation of 4H-SiC/SiO₂ by Charge-Transfer Type Molecular Dynamics
• Improvement of Interface Properties for Thermally Oxidized SiC/SiO₂ MOS Capacitor by Post Oxidation Annealing Treatment
• High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition
• Chapter 6: MOSFET Physics
• Temperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiC
• Hypothesis to Explain Threshold Drift due to Dynamic Bipolar Gate Stress
• Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor
• Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs
• Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
• Physical Modelling of Charge Trapping Effects in SiC MOSFETs
• Chapter 7: Devices and Optimization
• A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation
• Threshold Voltage Adjustment on 4H-SiC MOSFETs Using P-Doped Polysilicon as a Gate Material
• Fabrication of Quasi-Vertical GaN-On-SiC Trench MOSFETs
• Demonstration of SiC Trench Gate MOSFETs with Narrow Cell Pitch Using Source Self-Aligned Process
• Optimized 750V SiC MOSFETs for Electric Vehicle Inverter Operation
• Assessing, Controlling and Understanding Parameter Variations of SiC Power MOSFETs in Switching Operation
• Influence of Cell Design and Gate-to-Source Voltage on Avalanche Robustness of SiC MOSFET Integrated JBS Diode
• Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters
• Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs
• Optimizing PECVD a-SiC:H Films for Neural Interface Passivation
• Suppression of Short Channel Effects for a SiC MOSFET Based on the S-MOS Cell Concept
• High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V_GS(on)
• Effect of Termination Region on Unclamped Inductive Switching Failure for 4H-SiC VDMOS
• 650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout
• Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes
• A Fully Self-Aligned SiC Trench MOSFET with 0.5 μm Channel Pitch
• Investigations on 4H-SiC Low Voltage nMOSFETs with Thin Thermal SiO₂/ Deposited Oxide Gate Dielectric
• Highly Efficient Floating Field Rings for SiC Power Electronic Devices - A Systematic Experimental Study
• Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates
• Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications
• Tailoring the Charge Carrier Lifetime Distribution of 10 kV SiC PiN Diodes by Physical Simulations
• 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency
• A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM
• Chapter 8: JFETs Device
• Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET
• Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs
• Optimization of TaSi₂ Processing for 500 °C Durable SiC JFET-R Integrated Circuits
• Chapter 9: Device Characterization
• A Novel Non-Invasive Cryostatic Spectrometry Technique to Characterize the Carriers’ Multiplication Factor in Silicon Carbide Power Devices
• Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO₂-Interface Defects
• Comparison of the Performance-Degrading Near-Interface Traps in Commercial SiC MOSFETs
• SiC MOSFETs Biased C-V Curves: A Temperature Investigation
• Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation
• Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
• Investigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO₂/ SiN Gate Stack
• Measurement and Analysis of Body Diode Stress of 3.3 kV SiC-Mosfets with Intrinsic Body Diode and Embedded SBD
• Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs
• Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs
• Lifetime Projection of Bipolar Operation of SiC DMOSFET
• Chapter 10: Reliability
• Bias-Induced Instability of 4H-SiC CMOS
• On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs
• Robustness of SiC MOSFETs under Repetitive High Current Pulses
• Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress
• Chip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 Cycles
• Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures
• AC-Stress Degradation in SiC MOSFETs
• Power Cycling on Lateral GaN and β-Ga₂O₃ Transistors
• Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements
• Humidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical Packages
• Reliability and Standardization for SiC Power Devices
• Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes
• Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs
• Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiC^TM Substrate