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Processes in Devices Fabrication

Veliadis, Victor Salemi, Arash
Heftet / 2025 / Engelsk

Produktdetaljer

ISBN
9783036409115
Publisert
2025-09-25
Utgiver
Trans Tech Publications Ltd
Vekt
320 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
104

Redaktør
Veliadis, Victor
Salemi, Arash

Processes in Devices Fabrication

Veliadis, Victor Salemi, Arash
Heftet / 2025 / Engelsk
Veliadis, Victor Salemi, Arash
Heftet / 2025 / Engelsk
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By combining perspective materials processing techniques, device engineering, and circuit integration methods, this special edition provides a comprehensive overview of the state of the art in SiC-based power electronics device fabrication technologies, serving as a valuable resource for researchers, engineers, and practitioners in the field.

Les mer

Special topic volume with invited peer-reviewed papers only

  • Preface
  • Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
  • Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
  • Impact of Interfacial SiO2 Layer Thickness on the Electrical Performance of SiO2/High-K Stacks on 4H-SiC
  • Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
  • Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
  • The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
  • A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
  • BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
  • Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
  • Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
  • Deep Implanted SiC Super-Junction Technology
  • Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry
  • Study of SiC Trench Etching Characteristics for Different Crystal Planes
Les mer

Relaterte produkter

By combining perspective materials processing techniques, device engineering, and circuit integration methods, this special edition provides a comprehensive overview of the state of the art in SiC-based power electronics device fabrication technologies, serving as a valuable resource for researchers, engineers, and practitioners in the field.

Les mer

Special topic volume with invited peer-reviewed papers only

  • Preface
  • Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
  • Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
  • Impact of Interfacial SiO2 Layer Thickness on the Electrical Performance of SiO2/High-K Stacks on 4H-SiC
  • Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
  • Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
  • The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
  • A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
  • BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
  • Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
  • Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
  • Deep Implanted SiC Super-Junction Technology
  • Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry
  • Study of SiC Trench Etching Characteristics for Different Crystal Planes
Les mer

Produktdetaljer

ISBN
9783036409115
Publisert
2025-09-25
Utgiver
Trans Tech Publications Ltd
Vekt
320 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
104

Redaktør
Veliadis, Victor
Salemi, Arash

Relaterte produkter