Produktdetaljer
ISBN
9783036409177
Publisert
2025-09-15
Utgiver
Trans Tech Publications Ltd
Vekt
300 gr
Høyde
240 mm
Bredde
170 mm
Dybde
4 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
88
This special edition provides a focused overview of the state of the art in the areas of control, analysis of characteristics, and effect compensation of silicon carbide structure defects, highlighting the scientific foundations and technological solutions that underpin the development of high-quality SiC devices.
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Special topic volume with invited peer-reviewed papers only
- Preface
- Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiCTM Engineered Substrates for High Volume Manufacturing
- Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
- Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
- Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
- Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
- Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
- Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
- Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
- Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes
- Investigation on Bipolar Degradation Caused by Micropipe in 3.3 kV SiC-MOSFET
- Suppression and Analysis of Bipolar Degradation in 4H-SiC PiN Diodes through Proton Implantation
Les mer
Produktdetaljer
ISBN
9783036409177
Publisert
2025-09-15
Utgiver
Trans Tech Publications Ltd
Vekt
300 gr
Høyde
240 mm
Bredde
170 mm
Dybde
4 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
88