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Technological Improvements in Devices Fabrication

Veliadis, Victor Salemi, Arash
Heftet / 2025 / Engelsk

Produktdetaljer

ISBN
9783036409122
Publisert
2025-10-09
Utgiver
Trans Tech Publications Ltd
Vekt
320 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
106

Redaktør
Veliadis, Victor
Salemi, Arash

Technological Improvements in Devices Fabrication

Veliadis, Victor Salemi, Arash
Heftet / 2025 / Engelsk
Veliadis, Victor Salemi, Arash
Heftet / 2025 / Engelsk
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This special edition provides a comprehensive overview of the latest process enhancements that underpin the continued advancement of SiC-based device technologies by addressing methods of compound semiconductor processing and technologies of electronics device structure forming with a focus on end-device reliability.

Les mer

Special topic volume with invited peer-reviewed papers only

  • Preface
  • Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
  • C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes
  • Indium-Tin-Oxide (ITO) Interlayer-Assisted Ohmic Contacts on n-Type 4H-SiC with Low Specific Contact Resistance
  • Trench Etch Processing for SiC Superjunction Schottky Diodes
  • Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing
  • Analysis of Ohmic Contacts Simultaneously Formed on both n-Type and p-Type 4H-SiC
  • Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
  • Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
  • Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing
  • Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
  • Investigation of Poly-Si Gated, Al2O3-Based High-k Dielectrics on 4H-SiC
  • Effect of Inserting an Intervening Layer on Φb Reduction in TiN Schottky
  • SiC Plasma Dicing for Future High Yield Die Singulation
Les mer

Relaterte produkter

This special edition provides a comprehensive overview of the latest process enhancements that underpin the continued advancement of SiC-based device technologies by addressing methods of compound semiconductor processing and technologies of electronics device structure forming with a focus on end-device reliability.

Les mer

Special topic volume with invited peer-reviewed papers only

  • Preface
  • Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
  • C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes
  • Indium-Tin-Oxide (ITO) Interlayer-Assisted Ohmic Contacts on n-Type 4H-SiC with Low Specific Contact Resistance
  • Trench Etch Processing for SiC Superjunction Schottky Diodes
  • Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing
  • Analysis of Ohmic Contacts Simultaneously Formed on both n-Type and p-Type 4H-SiC
  • Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
  • Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
  • Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing
  • Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
  • Investigation of Poly-Si Gated, Al2O3-Based High-k Dielectrics on 4H-SiC
  • Effect of Inserting an Intervening Layer on Φb Reduction in TiN Schottky
  • SiC Plasma Dicing for Future High Yield Die Singulation
Les mer

Produktdetaljer

ISBN
9783036409122
Publisert
2025-10-09
Utgiver
Trans Tech Publications Ltd
Vekt
320 gr
Høyde
240 mm
Bredde
170 mm
Dybde
5 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
106

Redaktør
Veliadis, Victor
Salemi, Arash

Relaterte produkter