This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures.  The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel  transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs.  Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics. 

Describes an arsenal of dynamic, RF and time-domain techniques to understand and characterize the behavior of novel transistors made of graphene, carbon nanotubes and silicon-on-insulator, and using new transistor structrures Explains the importance of using RF and time-domain measurements and the relationship of such measurement results to DC transistor characteristics Covers practical aspects of using the measurement techniques described Discusses the inter-relationship of the various methods presented

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